Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K

Abstract

The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The results demonstrate that these SiPM can be operated with high single-photon sensitivity at cryogenic temperatures. However, device parameters like quenching resistance vary. The developed model of the temperature dependence of SiPM properties is generally applicable to other devices.