Characterization of Silicon Photomultipliers (SiPMs) for Space Exploration

Abstract

Silicon Photomultipliers (SiPMs) are the devices, which along with scintillation detectors can be used for the radiation measurements. We are developing instruments using scintillation detector and SiPM arrays for the measurements of high-energy X-rays and charged particles. These instruments are being developed for the future space exploration programs. Here, we report the work carried out for the characterization of SiPM and its response in the hardened environments. Results from two different experiments are presented. In the first experiment: electrical characterizations of SiPMs from two manufacturers i.e. SensL (now Onsemi) and Ketek have been carried out. Three different pixel sizes 20 μm, 35 μm and 50 μm of MicroC series from SensL and 50 μm pixel size of PM3350 series of Ketek have been tested. In order to see ‘device – to - device’ variations, three SiPMs of each pixel size are used in the experiment i.e. total twelve SiPMs have been characterized for the breakdown voltage, quenching resistor and their temperature dependences. Variations in the gain and microcell recovery time due to temperature are also estimated. In the second experiment: one of the SiPM models (SensL make 35 μm pixel size) has been subjected to various environmental tests mimicking the space conditions. Matching of pre and post I-V measurements for each tests confirms that performance of the device is not degraded and hence selected model of SiPM can be explored for the future space instrumentation.