Abstract
High-resolution synchrotron radiation photoemission studies of Ce deposited onto cleaved Si(111)-2\ifmmode\times\else\texttimes\fi{}1 reveal heterogeneous growth which involves clustering, Ce/Si reaction to form silicide patches, lateral silicide growth, and finally Ce overlayer formation with surface segregated Si. Core-level line-shape analysis reveals three distinct Si local bonding configurations. The relative interface concentration of each Si species has been determined as a function of overlayer thickness, and a model for this interface is presented and discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
