Abstract
The effects of internal oxygen impurities released from the TiSiO 2 reaction on the lateral silicide growth using the a-Si Ti bilayer structure are presented. The lateral silicide growth can be effectively retarded by internal oxygen impurities using a-Si Ti bilayer process after silicidation at a temperature below 700°C. Compared with the simultaneously processed single Ti layer process, it is observed that both high-level oxygen impurities and their redistribution in the possible Si diffusion paths play the same important role on the suppression of the lateral silicide growth. Finally, the oxygen-redistribution-dependent kinetics is developed to give a self-consistent explanation for the experimental observations from both the single Ti layer process and the a-Si Ti bilayer process.
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