Modeling a copper/carbon nanotube composite for applications in electronic packaging

Abstract

A model is developed to determine the current density for a copper/carbon nanotube matrix configured as through silicon vias, an appropriate structure for interconnect applications. The electrical behavior of aligned carbon nanotube bundles mixed with copper at varying ratios is studied. The impact of the carbon nanotube dimensions and joule heating on electrical properties are analyzed. The results are compared for copper combined with single-walled carbon nanotube bundles and copper combined with multi-walled carbon nanotube bundles. The results suggest that through silicon vias filled with a copper/carbon nanotube matrix exhibit a more homogeneous current distribution with reduced skin effect compared to vias filled with only copper.