Abstract
The lateral compositional distribution of indium on InGaAs sample surface, which was grown by metalorganic vapor phase epitaxy (MOVPE), has been investigated by high resolution X-ray diffractometry (HRXRD). It was found that the In content increases exponentially along the gas flow direction. Based on the X-ray results, a general simplified model, which analyses the lateral compositional distribution for a ternary alloy grown in a horizontal MOVPE reactor, is proposed according to the chemical chain reaction. This model takes into account the thermal decomposition and vapor–solid interface reaction in the MOVPE process. Furthermore, according to this model, some proposals were suggested in order to improve the compositional uniformity in a ternary alloy.
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