Model of the RHEED intensity oscillations based on reflectivity of the MBE grown surface

Abstract

We present a new simple model of the Reflection High Energy Electron Diffraction (RHEED) intensity oscillations that are used experimentally to control epitaxial growth by Molecular Beam Epitaxy (MBE) and to study surface processes governing the MBE growth 1. The model is based on the change of the RHEED intensity according to the reflectivity of the surface morphology during the MBE growth. It was found that the change of the incident angle of an analyzing electron beam, governing the reflectivity of the grown surface, causes the phase shift of the RHEED intensity oscillations with respect to the layer growth.