Abstract
In the diffusion-drift approximation, we have constructed a phenomenological theory of the coexisting migration of v-band holes and holes by means of hopping from hydrogen-like acceptors in the charge state (0) to acceptors in the charge state (−1). A p-type crystalline semiconductor is considered at a constant temperature, to which an external stationary electric field is applied. In the linear approximation, analytical expressions for the screening length of the static electric field and the length of the diffusion of v-band holes and the holes quasilocalized on acceptors are obtained for the first time. The presented relations, as special cases, contain well-known expressions. It is shown that the hopping migration of holes via acceptors leads to a decrease in the screening length and in the diffusion length.
Highlights
we have constructed a phenomenological theory of the coexisting migration of v-band holes and holes
A p-type crystalline semiconductor is considered at a constant temperature
the holes quasilocalized on acceptors are obtained for the first time
Summary
In the diffusion-drift approximation, we have constructed a phenomenological theory of the coexisting migration of v-band holes and holes by means of hopping from hydrogen-like acceptors in the charge state (0) to acceptors in the charge state (−1). Цель работы – расчет длины экранирования внешнего стационарного электрического поля и длины диффузии как дырок v-зоны, так и дырок, прыгающих по неподвижным водородоподобным акцепторам, в ковалентных кристаллических полупроводниках p-типа в условиях сосуществования зонной и прыжковой электропроводностей, т.
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