Model of intense pulsed ion beam and simulation study of energy deposited on target

Abstract

Gaussian type models have been established according to the real detected voltage of magnetically insulated ion diode and intense pulsed ion beam density near the focus of the diode. The energy deposition of Al target irradiated by intense pulsed ion beam has been simulated by Monte Carlo method based on these models. The results of energy depositions of the irradiation of single energy ions and the Gaussian distribution IPIB have been obtained. Especially cases of ion beam irradiating Al target at different angles on one dimension and two dimensions are discussed. The evolution processes of the energy deposition of ions in target have been simulated during a pulse. In addition, incident angles of H + ions and C + ions ranging from 20 to 40° have been researched. We obtained the conclusions that C + ions of the beam affect the physical properties of near surface region, but H + ions affect the deeper layer. The energy of intense pulsed ion beam mainly deposits on target surface, so melting and evaporation begin both from target surface.