Abstract
We developed a model to describe the linear electro-optic (LEO) component of the reflectance-difference (RD) spectrum of zinc-blende semiconductors for energies around the ${E}_{1}$ and ${E}_{1}+{\ensuremath{\Delta}}_{1}$ critical points. The model is based on a piezoelectric effect due to the semiconductor surface electric field and predicts a LEO line shape given by the superposition of two terms, a first one proportional to the energy derivative of the reflectance spectrum and a second one associated with the undifferentiated reflectance spectrum. We compared the predictions of the model to experimental LEO line shapes for molecular-beam epitaxy GaAs(001) layers doped with $1.4\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{3}$ Si donors and found an excellent agreement. The results reported in this paper help develop the LEO RD spectroscopy as a characterization tool for zinc-blende semiconductors.
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