Abstract
A simple model for the leakage current decay in Al/HfYO x /GaAs structures subjected to constant voltage stress is presented. The model is based on a circuit representation of the so-called Curie–von Schweidler (CS) law for dielectric degradation that can be easily extended to other metal–insulator–semiconductor (MIS) structures exhibiting similar behavior. By means of the inclusion of effective series and parallel resistances the proposed approach allows to eliminate the singularities of the CS law at t = 0 and t = ∞ so that the final result corresponds to a power-law logistic current–time characteristic.
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