Abstract
The anomalous shape of the Zn diffusion profile in GaAs has been quantitatively explained. The Frank–Turnbull mechanism is invoked to govern the interchange between interstitial and substitutional Zn, via the Ga vacancies. These vacancies are proposed to be either neutral or singly ionized, depending on the position of the Fermi level. In addition, two physical phenomena are proposed. Substitutional Zn thermally generates interstitial Zn-Ga vacancy pairs and there is pairing between the donor, interstitial Zn, and the acceptor, substitutional Zn. The model is found to be in good agreement with the experimental data.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
