Abstract
Reactive ion etching of via holes for grounding of monolithic microwave integrated circuits has become the industry standard. It is well known that the via etch rate decreases as a function of decreasing via mask diameter as well as increasing etch depth. A model has been developed which relates the experimental etch rates in Cl2/BCl3/Ar plasmas to the ion and neutral fluxes incident on the wafer. This model provides a useful tool for designers and process engineers to predict etch depths and average etch rates as functions of via diameter and total etch time.
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