Model for electrical isolation of GaN by light-ion bombardment

Abstract

We present a model for electrical isolation of GaN by light-ion bombardment. In our model, a decrease in the concentration of free carriers responsible for isolation is assumed to be due to the formation of complexes of ion-beam-generated point defects with shallow donor or acceptor dopants. These defect interaction processes are described in terms of quasichemical reactions. Results show that our model can adequately describe experimental data for electrical isolation in the case of MeV light-ion irradiation of n-GaN.