Abstract
We have fabricated <TEX>$Bi_{3.25}La_{0.75}Ti_3O_12$</TEX> (BLT) thin films on the Pt/Ti/<TEX>$SiO_2$</TEX>/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from <TEX>$550^{\circ}C$</TEX> to <TEX>$750^{\circ}C$</TEX>. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above <TEX>$600^{\circ}C$</TEX> for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at <TEX>$650^{\circ}C$</TEX> was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of <TEX>$25.66\mu C/\textrm{cm}^2$</TEX>, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to <TEX>$3.5{\times}10^9$</TEX> bipolar cycling at 5 V and 100 kHz.
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