Abstract
The effect of excess Bi contents on the ferroelectric properties of B <TEX>$i_{3.25}$</TEX> L <TEX>$a_{0.75}$</TEX> <TEX>$Ti_3$</TEX> <TEX>$O_{12}$</TEX> (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ <TEX>$SiO_2$</TEX>/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5<TEX>$\times$</TEX>10<TEX>$^{9}$</TEX> bipolar switching cycling.
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