Abstract
AbstractN‐polar (000$ \bar 1 $) and Ga‐polar (0001) GaN templates were patterned with holographic lithography and etched to form nanopillars (NP) and nanostripes (NS) arrays, upon which InGaN and GaN was subsequently regrown by metal organic chemical vapor deposition (MOCVD). A wide range of growth conditions were explored to determine the structural impact of the growth conditions. The results were evaluated by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). It was observed that the initial polarity of the GaN template used to form the pillar or stripe nanostructures had a significant impact upon the results of the regrowth. The Ga‐polar NP exhibited (0001), {01$ \bar 1 $0}, and {01$ \bar 1 $1} facets, while the N‐polar NP exhibited (000$ \bar 1 $) and {01$ \bar 1 $0} facets. The NS samples also exhibited different facet formation depending upon the initial polarity. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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