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Abstract
ZnO layers have been grown by metal-organic chemical vapor deposition using diethylzinc and iso-propanol. Heteroepitaxial growth on c-plane sapphire and GaN templates as well as homoepitaxial growth on bulk ZnO substrates has been carried out at a growth rate of 0.95 μm/h. The photoluminescence at 5 K of all samples shows strong near band edge emission with line widths of 5–12 meV and phonon replicas can be identified, indicating the good optical quality. The full widths at half maximum of the θ – 2θ scans are between 100 and 270 arcsec depending on the substrate. The results suggest that the substrate material is limiting the quality of the ZnO layers.
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