Abstract
By optimizing the growth conditions, well-aligned ZnO nano-islands with good uniformity have been successfully deposited on Al 2O 3 (0 0 0 1) substrate by the metal organic chemical vapor deposition (MOCVD) at the growth time of 2 min (growth temperature was 500°C). The variation of densities and sizes of ZnO nano-islands are studied as the function of the growth time and growth temperature. The islands densities decreased markedly with increasing growth temperature, which is different from some early reports. This different phenomenon has been explained by that the typical mean inter-island distance has been reached but the stress relaxation was not large enough to compensate this effect at higher growth temperature. In addition, the properties and stress involved in ZnO islands are discussed in detail by means of X-ray diffraction.
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