MOCVD growth of InGaAlP using ethyldimethylindium as an In source and application to visible-region lasers

Abstract

Ethyldimethylindium (EDMI) has been investigated as a new metalorganic In source for the MOCVD growth of InGaAlP, and it was compared with trimethylindium (TMI). Good compositional control for InGaAlP was possible using EDMI. The indium incorporation efficiency from EDMI is higher than that from TMI. Undoped InGaP and InAlP layers grown using EDMI have a donor concentration ( N D) about 3 × 10 16 cm -3 higher than that those grown using TMI. High residual donor concentration in InGaAlP grown using EDMI affects the Zn doping characteristics. Si doping characteristics of InGaAlP grown from EDMI are almost the same as those when growth is from TMI. The inner stripe visible-region (670 nm) laser operation was achieved using DH wafers grown from EDMI. Excellent laser characteristics, such as a threshold current of 66 mA and a maximum cw operation temperature of 78°C, were obtained. These characteristics are comparable with those of lasers grown from TMI.