Abstract
A new source material combination of ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP) is used for low-pressure metalorganic vapor phase epitaxy (MOVPE) of InP. The growth rate dependence on the V/III ratios indicates that a EDMIn:TBP parasitic reaction exists. However, InP layers grown using EDMIn and TBP show good electrical and optical properties, comparable to those using a conventional source material combination of trimethylindium (TMI) and phosphine (PH 3). The highest electron mobility at 77 K is 56,000 cm 2/V · s with a free carrier concentration of 1.0 × 10 15 cm -3. Sharp and well resolved exciton peaks were observed in 4.0 K PL spectra.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
