Abstract
High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was realized through variation of the centrifugation time, and the highest area densities were obtained as high as 490 and 120 NP/μm2 for 10- and 20-nm diameters of Au NPs, respectively. Based on the vapor–liquid–solid growth mechanism, the growth rates of GaAs NWs at 430 °C were 18.2 and 21.5 nm/s for the highest area density obtained of 10- and 20-nm Au NP-catalyzed NWs. The growth rate of the GaAs NWs was reduced with the increase of the NW density due to the competition of precursor materials. High crystal quality of the NWs was also obtained with no observable planar defects. 10-nm Au NP-induced NWs exhibit wurtzite structure whereas zinc-blende is observed for 20-nm NW samples. Controllable density and high crystal quality of the GaAs NWs on ITO demonstrate their potential application in hybrid a solar cell.
Highlights
Semiconductor nanowires (NWs) have been intensively explored due to their outstanding potential as the building blocks for future photonic and electronic devices [1, 2]
After thorough cleaning and functionalization, the 4 × 4-mm Indium tin oxide (ITO) substrates were stuck onto a tube cap, and the aqueous Au NPs solution of 0.5 mL was filled in the tube
A control group was prepared with the same Au NP-solution concentration and the droplet deposition on ITO glass lasted for 3 h
Summary
Semiconductor nanowires (NWs) have been intensively explored due to their outstanding potential as the building blocks for future photonic and electronic devices [1, 2]. NWs-based solar cells [3, 4] and field-effect transistors (FETs) [5] have been realized on the basis of NWs’ superior optical and electrical properties including relaxation of lattice strain and capability for top-down and bottom-up assembly etc. Among various types of NWs, III-V semiconductor materials such as GaAs are of particular interests owing to direct band gap, high electron mobility [9], and the ability of integration on large lattice mismatch low-cost substrates [8]. Indium tin oxide (ITO) coated glass as one of the most widely used transparent conductive oxide substrates are investigated as an attractive platform for NWs growth. Hybrid solar cells were designed on the basis of successful growth of InP NWs on ITO for the first time
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
