Abstract
GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) glass substrate by metalorganic chemical vapour deposition (MOCVD), using Au nanoparticles (NPs) as catalyst. By functionalization of the ITO glass and optimization of the Au NPs deposition time, the Au NPs area density deposited on the ITO glass reaches 92 NP μm−2. Uniform and free-standing GaAs NWs without kinking or worm-shape defects have been grown at 430 °C. More than 96% of the NWs have tilt angles larger than 45° with respect of the substrate. The effects of the growth temperature and the Au NPs size on the GaAs NWs growth rate, the NW diameter, and tapering effect are investigated. These results of GaAs NWs growth are the essential step for understanding III–V NWs integration on transparent conductive oxide coated low cost substrate and developing high efficiencyhybrid solar cells.
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