MOCVD growth and characterization of high quality InP

Abstract

We report on the first growths of InP by low-pressure MOCVD using solid TMI as the indium source. The results equal or exceed the existing state of the art for high purity InP layers. A low pressure (0.1 atm) horizontal reactor was used to suppress possible adduct formation. A low TMI bath temperature 12.2°C was used to get stable sublimation with hydrogen carrier gas. A new reactor configuration consisting of a gas collector and a 60° inclined susceptor was used, which made growth rate and efficiency as high as 8.4 μm/h and 3832 μm/mol, respectively, even though both the TMI bath temperature and system pressure are low. The morphology of the epitaxial layers was good and thickness of the epilayers was uniform. The best room temperature and 77 K mobilities were 5366 and 131620 cm 2/V·s, respectively, for the same sample and the lowest net carrier concentration was n 300=1.1×10 14 cm −3. Th e 3.7 K photoluminescence exciton spectra exhibit fine structures and no neutral acceptor bound exciton emission was observed on the best samples indicating low impurity compensation, high quality and purity.