Abstract
Growth of InP:Fe has been performed in a low pressure hydride VPE system at a total pressure of 2000 Pa. As a dopant, iron chloride obtained from an elemental iron source reacting with gaseous HCl has been used. Both the source reaction and the growth have been performed in a nitrogen ambient. Fe doping levels between 10 16 and approximately 10 20 cm -3 could be adjusted by varying the HCl flow over the iron source. The growth temperature has only a slight effect on the Fe incorporation mechanism. Additionally, the Fe incorporation is found to depend on the InP growth rate. I–V measurements reveal semi-insulating behaviour for samples with iron concentrations above 10 17 cm -3, leading to specific resistivities in the 10 8 Ω cm region.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
