MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs

Abstract

Large-area HgCdTe 480×640 thermal-expansion-matched hybrid focal plane arrays were achieved by substituting metalorganic chemical vapor deposition (MOCVD)-grown CdZnTe/GaAs/Si alternative substrate in place of bulk CdZnTe substrates for the growth of HgCdTe p-on-n double-layer heterojunctions by controllably-doped mercury-melt liquid phase epitaxy (LPE). (100) CdZnTe was grown by MOCVD on GaAs/Si using a vertical-flow high-speed rotating disk reactor which incorporates up to three two-inch diameter substrates. Layers having specular surface morphology, good crystalline structure, and surface macro defect densities <50 cm−2 are routinely achieved and both the composition uniformity and run-to-run reproducibility were very good. As the composition of the CdZnTe layers increases, the x-ray full width at half maximum (FWHM) increases; this is a characteristic of CdZnTe grown by VPE techniques and is apparently associated with phase separation. Despite a broader x-ray FWHM for the fernary CdZnTe, the FWHM of HgCdTe grown by LPE on these substrates decreases, particularly for [ZnTe] compositions near the lattice matching condition to HgCdTe. An additional benefit of the ternary CdZnTe is an improved surface morphology of the HgCdTe layers. Using these silicon-based substrates, we have demonstrated 78K high-performance LWIR HgCdTe 480×640 arrays and find that their performance is comparable to similar arrays fabricated on bulk CdZnTe substrates for temperatures exceeding approximately 78K. The performance at lower temperatures is apparently limited by the dislocation density which is typically in the low-mid 106 cm−2 range for these heteroepitaxial materials.