Abstract
New naphthalenetetracarboxylic diimide derivative based thin film organic transistors (OTFTs) have been fabricated on a variety of dielectrics: SiO2, polyethylene, and polyvinylidene fluoride trifluoroethylene. Resulting inverted gate OTFTs were found to be p channel with Au contacts. In situ annealing studies revealed densification and significant mobility improvement. The mobility of as-deposited films was around 10−4cm2V−1s−1 for the best material and this could be improved by two orders of magnitude by a judicious annealing regimen and using a low static dielectric constant material for the gate dielectric.
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