Abstract
The field dependence of mobility has been determined for electrons and holes in both germanium and silicon. The observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{\ensuremath{-}\frac{1}{2}}$ is 900 volts/cm for $n$-type germanium, 1400 volts/cm for $p$-type germanium, 2500 volts/cm for $n$-type silicon, and 7500 volts/cm for $p$-type silicon. These values of critical field are between two to four times those calculated on the basis of spherical constant energy surfaces in the Brillouin zone. A saturation drift velocity of ${6(10)}^{6}$ cm/sec is observed in germanium which is in good agreement with predictions based on scattering by the optical modes. Data on $n$-type germanium at 20\ifmmode^\circ\else\textdegree\fi{}K show a range over which impurity scattering decreases and the mobility increases with field until lattice scattering dominates as at the higher temperatures.
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