Mobility of charge carriers in vapor-phase grown C 60 single crystal

Abstract

Transport properties of charge carriers in the fullerene C 60 single crystal grown from the vapor phase were studied by using the time-of-flight technique, and absolute values of mobility for electrons μ e = 0.5 ± 0.2 cm 2/V s, and holes μ h = 1.7 ± 0.2 cm 2/V s at room temperature were measured. Crystals were characterized as having about 3 × 10 13 cm −3 deep trapping sites for holes. The temperature dependence of μ h was measured over a broad temperature range. Two features were revealed: (i) a step-wise increase of the mobility below the phase-transition and (ii) almost temperature independence of mobility in the regions 50–200 and 250–310K.