Mobility model for advanced SOI-MOSFETs including back-gate contribution

Abstract

In this report it is verified that advanced SOI-MOSFETs with very thin silicon-on-insulator (SOI) and buried oxide (BOX) layers require an improved mobility modeling which considers the contributions of the back-gate field. Furthermore, a newly developed compact mobility model is presented, which satisfies these advanced SOI-MOSFET needs and still preserves the universality of the low-field mobility. The important novel modeling property is that the effective electric field is not only determined by the field induced at the surface but is modified by the potential distribution across SOI and BOX layers. With the developed model accurate reproduction of measured current characteristics under a wide variety of bias conditions becomes possible.