Mobility-lifetime product in microdoped amorphous silicon deposited by hot-wire chemical vapor deposition

Abstract

The drift mobility deep trapping lifetime product, μτd, of electrons, μτe, and holes, μτh, of hydrogenated amorphous silicon prepared using hot-wire chemical vapor deposition at substrate temperature of 200°C was calculated using charge-collection as a function of applied voltage curves from time-of-flight measurements. μτd was observed to be a function of the position of the Fermi level. Microdoping with trimethylboron was used to go from undoped (slightly n-type, μτe>μτh) to slightly p-doped (μτh >μτe) films.