Abstract
Herein, indium-doped tin oxide (TIO) thin films were prepared using the solution process. The structural characteristics, surface morphologies, and chemical compositions of the prepared films were systematically investigated as a function of indium-doping contents. The films were integrated as a channel layer into thin-film transistors (TFTs). Results show that indium can be used as a carrier suppressor as well as a mobility enhancer for SnO2. The optimal devices exhibited satisfactory performance, achieving field-effect mobility of 8.94 cm2/V·s, positive threshold voltage of 0.25 V, small subthreshold swing of 0.4 V/decade, and on-to-off current ratio of 1.5 × 106. The results of this study suggest that TIO-TFTs are very promising for use in next-generation displays.
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