Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics

K Rim,V Mazzeo,B.h Lee ,C D’emic ,J O Chu ,M Leong ,Evgeni Gusev ,J A Ott ,T Kanarsky ,A Mocuta ,H Chen ,J.j Welser ,K Chan ,D Boyd ,Sarale E Cohen ,H.-S Philip Wong

doi:10.1109/vlsit.2002.1015368

Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics

K Rim, V Mazzeo + Show 14 more

https://doi.org/10.1109/vlsit.2002.1015368

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Publication Date: Jun 11, 2002

Citations: 15

Affiliation: IBM Research - Thomas J. Watson Research Center, IBM (United States)

#Strained Si NMOSFETs #Gate Dielectric + Show 8 more

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Abstract

Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000/spl times/ gate leakage reduction, strained Si NMOSFETs with HfO/sub 2/ gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO/sub 2/ gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO/sub 2/ gate dielectric (universal MOSFET mobility).

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