Abstract
High performance n-type F16CuPc organic thin-film transistors (OTFTs) were fabricated on polyethylene terephthalate (PET) using silk fibroin as the gate dielectric. The average field-effect mobility (μFE) value in the saturation regime is 0.39cm2V−1s−1 approximately one order of magnitude higher than the reported values in the literature. A typical F16CuPc OTFT exhibits an on/off current ratio of 9.3×102, a low threshold voltage of 0.65V, and a subthreshold swing value of 730mV/decade. The enhancement of μFE results from very good crystal quality of F16CuPc on silk fibroin, supported by grazing incidence X-ray diffraction (GIXD) data.
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