Mobility characteristics of non-equilibrium carriers in III–V compounds at low lattice temperatures

Abstract

The effect of the finite energy of the deformation potential and piezoelectric acoustic phonons on the high-field mobility characteristics of n-type InSb and InAs at low lattice temperatures is calculated by a numerical method taking the non-parabolicity of the conduction band into account and under the conditions that the acoustic phonon energy cannot be neglected in comparison with the carrier energy and the phonon distribution cannot be represented by the equipartition law. The results are interesting in that they are significantly different from those that follow from the traditional approximation of negligible phonon energy and also provide good agreement with the available experimental data. The inadequacies of the present theory and the scope for further improvements are discussed.