Electron transport in GaAs at low lattice temperatures

Abstract

AbstractThrough numerical methods, investigations have been carried out to see how the finite energy of the deformation potential and piezoelectric acoustic phonons affects the ohmic and non‐ohmic mobility characteristics of n‐type GaAs taking the non‐parabolicity of the conduction band into account and under the conditions that, unlike the traditional approximations, the energy of the acoustic phonons can neither be neglected in comparison with the carrier energy nor the phonon population be represented by the equipartition law. The results show interesting features in that they are significantly different from those that follow from the traditional approximation of negligible phonon energy and also provide better agreement with the available experimental data. The inadequacies of the present theory and the scope for further refinements are discussed.