Abstract
It was found that the addition of MnO2 particles into the HF/HNO3/H2O system could significantly improve the texturization etching performance on multi-crystalline silicon (mc-Si) wafer. For a wide component ratio range of HF/HNO3/H2O from HF-rich to HNO3-rich, by optimizing the MnO2 usage and the etching time, the addition of MnO2 particles always reduced the texture reflectance greatly. Low weighted average surface reflectance (Ra) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved on both the slurry wire sliced (SWS) mc-Si and the diamond wire sliced (DWS) mc-Si. Due to its excellent effect and simple processing, the MnO2/HF/HNO3/H2O etching system can be expected as a candidate for high-performance texturization on mc-Si wafer, especially on DWS mc-Si wafer.
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