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Abstract
Fumed silica is widely used for SiO2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, the used slurry being disposed of. We have demonstrated that Mn2O3 abrasive slurry polishes dielectric SiO2 film, giving 4 times the removal rate of conventional fumed silica slurry. The higher removal rate reduces the total amount of slurry used, consequently reducing the amount of used slurry waste. The removal rate of Mn2O3 slurry remains constant for solid concentrations between l and 10 wt %, and stays constant without pad conditioning. These characteristics are very useful for slurry reuse. Remanufacture of Mn2O3 slurry from used slurry has been demonstrated, and the removal rates of the remanufactured and fresh slurries are the same. Reuse and remanufacturing drastically reduce the amount of waste.
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