Abstract
Mn-doped AlN nanowires were synthesized by in situ doping of Mn using a chemical vapor deposition method. Analyses of microstructure and chemical compositions indicate that the as-prepared samples were homogenously Mn-doped AlN nanowires. The low temperature photoluminescence, and magnetization as a function applied magnetic field of the Mn-doped AlN nanowires were investigated. A Curie temperature higher than 300K was observed from the as-doped nanowires. The room temperature ferromagnetic properties of the synthesized Mn-doped AlN nanowires make it an excellent candidate for applications in future spintronic nanodevices.
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