MLogic: All spin logic device and circuits

J.-G Jimmy Zhu,D M Bromberg,M Moneck,V Sokalski,L Pileggi

doi:10.1109/e3s.2015.7336781

MLogic: All spin logic device and circuits

J.-G Jimmy Zhu, D M Bromberg + Show 3 more

https://doi.org/10.1109/e3s.2015.7336781

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Publication Date: Oct 1, 2015

Citations: 7

Affiliation: Carnegie Mellon University, Materials Science & Engineering

#Spin Logic Circuits #Spin Transfer Torque Magnetic Random Access Memory + Show 8 more

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Abstract

Emerging electronic devices utilizing spin based effects and phenomena, such as spin transfer torque magnetic random access memory (STT-MRAM), have gathered a great spectrum of effort, ranging from basic scientific research to technology development [1][2][3][4]. In this talk, we present a novel all spin logic circuits, referred to as mLogic, based on a four terminal device, referred to as mCell, that utilizes Spin Hall Effect (SHE) along with Dzyaloshinskii-Moriya-Interaction (DMI) at metallic interfaces for its operation [5].

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