Abstract
An exact solution is presented for mixing two or more different types of Random Deposition (RD) nonequilibrium surface growth processes. The depositions may be made in a sequential mode, or in a random mode by first randomly choosing the lattice site for deposition. The results hold in all dimensions d. Simulations are presented in d = 1 for comparison. Furthermore, a mean-field type of approach to mixing RD with other surface growth processes is tested against the exact solution.
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