Abstract
The mixed-mode behaviour of a hybrid SiC/Si cascode configuration is investigated. The cascode circuit consists of a high voltage SIC JFET in series with a low power Si device, either a trench MOSFET or a SOI LDMOSFET. The two cascode modules transient characteristics are compared, and it is found that the trench-cascode is faster, but the SOI equivalent offers lower energy losses. Similar results are obtained for high temperatures (T=525 K). The SOI configuration however offers the advantage of integration of drive and protection circuitry within the same chip and can run at high temperatures without the loss of MOS gate control of the CMOS circuits.
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