Abstract
A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.
Highlights
The development of wireless communications imposes more and more stringent requirements on the phase noise
A significant part of the power is consumed by the VCO (Voltage Controlled Oscillator)
In order to have an acceptable threshold voltage, we study the influence of the gate work function (Figure 5)
Summary
The development of wireless communications imposes more and more stringent requirements on the phase noise. The adequate phase noise computer modeling and simulation allow the investigation, prediction and minimization of this important characteristic at the design stage. VCOs are implemented in silicon-based technologies which are mainly realized as differential cross-coupled topologies due to the poor substrate isolation properties of silicon based technologies Their efficiency is low because in addition to the oscillator core, an output buffer is needed [1,2,3]. Hajimiri and Lee [10] have proposed a time variant model (LTV) based on the so-called Impulse Sensitivity Function (ISF) to predict phase noise. This technique provides insight into the design of oscillator.
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