Abstract
In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state-of-the-art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electro-thermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
