Abstract

Due to their exceptional electronic and optical properties, two-dimensional materials have emerged as one of the most promising candidates for future optoelectronic detection. However, optoelectronic detectors based on two-dimensional transition metal materials still face challenges due to factors such as limited absorption coefficients and carrier recombination. In this study, we combine two-dimensional Bi2O2Se with PbS quantum dots to prepare a hybrid heterojunction, effectively broadening the detection range and significantly enhancing the photoresponse rate. The hybrid photodetector exhibited a remarkable photoresponsivity of 14.89 A/W at 450 nm and demonstrated broadband detection capabilities from visible (405 nm) to near-infrared (1350 nm) light illumination. Moreover, the hybrid device showed reduced photocurrent response and recovery times, highlighting its improved performance over bare Bi2O2Se photodetectors. This work underscores the potential of hybrid heterojunctions for enhancing optoelectronic detection capabilities, paving the way for advanced applications in various fields.

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