Abstract
Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have beenstudied by means of atomic force microscopy and high-resolution x-ray diffractometry.Additionally, electron-beam induced current in a scanning electron microscopeand transmission electron microscopy have been employed to investigate misfitdislocations formed at the (001) heterostructure interface. The measurementsrevealed a direct correlation between the surface cross-hatched morphology and thearrangement of interfacial misfit dislocations. The reciprocal lattice mapping and therocking curve techniques employed for the samples aligned with either the or the [110] crystallographic direction perpendicular to the diffractionplane revealed anisotropic misfit strain relaxation of the InGaAs layers.This anisotropy results from an asymmetry in the formation of theα and β types of misfit dislocations oriented along the and [110] directions, respectively, which differ in their core structures. The misfit strainanisotropy causes a distortion of the unit cell of the layer and lowers its symmetry toorthorhombic.
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