Abstract
The relaxation process in InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy (MOVPE), has been investigated by means of high-resolution X-ray diffraction (HR-XRD). Transmission electron microscopy (TEM) revealed a two-dimensional (2D) network of 60° misfit dislocations formed at the (0 0 1) interface in the two orthogonal 〈1 1 0〉 crystallographic directions. The structural analysis by X-ray diffractometry was performed with the samples oriented either in the [1¯ 1 0] or the [1 1 0] perpendicular directions, using reciprocal lattice mapping. The observed anisotropic-strain relaxation, related to the asymmetry in the formation of α and β misfit dislocations along [1¯ 1 0] and [1 1 0] directions, respectively, causes distortion of the epilayer unit cell and lowers its symmetry to orthorhombic.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
