Abstract
This paper describes new polishing solutions using NaOCl and citric acid for polishing InP wafers. The NaOCl solution and citric acid in water are separately supplied and mixed on a polishing pad. The liberated chlorine in the mixed solution etches the InP wafer surfaces. Mirror polished InP wafers with good surface roughness are prepared with an optimized solution; R max is 0.8 nm and R a is 0.1 nm. No damage is observed on the mirror-finish surfaces of the InP wafers.
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