Abstract
This paper describes a mechanical-chemical polishing technique of InP wafers using NaOCl, citric acid, and SiO2 powder solutions. The polishing rate rapidly increases by adding SiO2 powder to NaOCl and citric acid solutions. We study the dependence of the polishing rate on SiO2 powder and discuss the mechanicalchemical effect of the mirror polishing of InP wafers with NaOCl, citric acid, and SiO2 powder solutions. We observe an increase in the polishing rate of InP wafers from 0.2 to 0.9 µm/min when SiO2 powder is added to NaOCl and citric acid solutions.
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