Abstract
This paper describes a mechanical-chemical polishing technique of InP wafers using NaOCl, citric acid, and SiO2 powder solutions. The polishing rate rapidly increases by adding SiO2 powder to NaOCl and citric acid solutions. We study the dependence of the polishing rate on SiO2 powder and discuss the mechanicalchemical effect of the mirror polishing of InP wafers with NaOCl, citric acid, and SiO2 powder solutions. We observe an increase in the polishing rate of InP wafers from 0.2 to 0.9 µm/min when SiO2 powder is added to NaOCl and citric acid solutions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
