Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model

Abstract

The minority electron transport is crucial for the performances of heterojunction bipolar transistors (HBTs). Among the III-V semiconductors family, GaAsSb exhibits several advantages making it a serious candidate for the new generation of high speed HBTs. However, this alloy suffers from a lack of experimental studies. Properties such as electronic structure and charge carrier mobilities are of prime importance in theoretical device operation calculations. In this article, we investigate the minority electron mobilities by means of an ensemble Monte Carlo modeling including polar optical phonon–plasmon coupling through a self-consistent dielectric function. Realistic electronic structures are provided by a nonlocal empirical pseudopotential method. It is found that GaAs0.50Sb0.50 does not show a mobility enhancement for very high acceptor doping levels unlike GaAs and Ga0.47In0.53As.